Method of doping P-type impurity ions in dual poly gate and...

Details Method of doping P-type impurity ions in dual poly gate and... Method of doping P-type impurity ions in dual poly gate and...

2011-08-23

2011-08-23

Geyer, Scott B (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Plasma

C438S514000, C438S527000, C438S529000, C438S530000

Reexamination Certificate

active

08003501

ABSTRACT:
A method of doping p-type impurity ions in a dual poly gate, comprising: forming a polysilicon layer doped with n-type impurity ions on a substrate with a gate insulation layer being interposed between the polysilicon layer and the substrate; exposing a region of the polysilicon layer; implementing a first doping of p-type impurity ions into the exposed region of the polysilicon layer by ion implantation so with a projection range Rp to a predetermined depth of the polysilicon layer; and implementing a second doping of p-type impurity ions into the exposed region of the polysilicon layer doped with the p-type impurity ions by plasma doping with a sloped doping profile.

REFERENCES:
patent: 4912065 (1990-03-01), Mizuno et al.
patent: 6815271 (2004-11-01), Zhang
patent: 7067367 (2006-06-01), Lee et al.
patent: 2006/0141690 (2006-06-01), Jin et al.
patent: 2009/0035886 (2009-02-01), Ellis-Monaghan et al.
patent: 2009/0061602 (2009-03-01), Lee et al.
patent: 2010/0120240 (2010-05-01), Rouh et al.
patent: 10-2001-0004934 (2001-01-01), None
patent: 10-2007-0047639 (2007-05-01), None

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