Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-09
2007-01-09
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S260000, C438S264000, C257S321000, C257S317000, C257SE21422, C365S185260
Reexamination Certificate
active
10912825
ABSTRACT:
In one embodiment, a method for discharging a semiconductor device includes providing a semiconductor substrate, forming a hole blocking dielectric layer over the semiconductor substrate, forming nanoclusters over the hole blocking dielectric layer, forming a charge trapping layer over the nanoclusters, and applying an electric field to the nanoclusters to discharge the semiconductor device. Applying the electric field may occur while applying ultraviolet (UV) light. In one embodiment, the hole blocking dielectric layer comprises forming the hole blocking dielectric layer having a thickness greater than approximately 50 Angstroms.
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Muralidhar Ramachandran
Prinz Erwin J.
Rao Rajesh A.
Sadd Michael A.
Steimle Robert F.
Freescale Semiconductor Inc.
Fulk Steven J.
Smith Bradley K.
Vo Kim-Marie
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