Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-05-27
1999-09-21
Chaudhari, Chandra
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438683, 438685, 427255, 4272551, 4272552, 4272557, H01L 2144
Patent
active
059566167
ABSTRACT:
A method of depositing a thin film on a substrate by plasma-enhanced CVD is provided. The method includes introducing H.sub.2 or H.sub.2 and N.sub.2 into a plasma-enhanced CVD reactor; generating a plasma in the reactor; introducing a reaction gas comprising TiCl.sub.4, silane, and either H.sub.2 or H.sub.2 and N.sub.2 into the reactor; and depositing a Ti film or a TiN film containing Si on a substrate in the reactor.
REFERENCES:
patent: 5595784 (1997-01-01), Kaim et al.
patent: 5665640 (1997-09-01), Foster et al.
"Development of Ti film depositing technology using ECR CVD with minimized Si etching and low C1 content", T. Miyamoto et al.; Jun. 27-29, 1995, VMIC Conference.
"Preparation of TiN Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition"; T. Akahori et al.; vol. 30, No. 12B, Dec. 1991, pp. 3558-3561, Japanese Journal of Applied Physics; and.
"Plasma-Enhanced Chemical Vapor Deposition of TiN from TiCl.sub.4 /N.sub.2 /H.sub.2 Gas Mixtures", N.J. Lanno et al.; J. Electrochem. Soc., vol. 136, No. 1, Jan. 1989.
Hasegawa Shin-ya
Ishihara Masahito
Mizuno Shigeru
Nashimoto Kiyoshi
Numasawa Yoichiro
Anelva Corporation
Berry Renee R.
Chaudhari Chandra
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