Method of depositing low dielectric constant silicon carbide...

Details Method of depositing low dielectric constant silicon carbide... Method of depositing low dielectric constant silicon carbide...

2005-02-15

2005-02-15

Meeks, Timothy (Department: 1762)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S314000, C430S316000, C430S317000, C438S700000, C438S702000, C438S717000, C438S637000, C438S783000, C438S784000, C438S786000, C427S577000, C427S578000, C427S249150, C427S255290

Reexamination Certificate

active

06855484

ABSTRACT:
A method of forming a silicon carbide layer for use in integrated circuits is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a nitrogen source in the presence of an electric field. The as-deposited silicon carbide layer incorporates nitrogen therein from the nitrogen source.

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