Method of depositing an amorphous carbon film for etch...

Details Method of depositing an amorphous carbon film for etch... Method of depositing an amorphous carbon film for etch...

2004-03-12

2009-12-29

Andújar, Leonardo (Department: 2893)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

Reexamination Certificate

active

07638440

ABSTRACT:
Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including forming a dielectric material layer on a surface of the substrate, depositing an amorphous carbon layer on the dielectric material layer by introducing a processing gas comprises one or more hydrocarbon compounds and an argon carrier gas, and generating a plasma of the processing gas by applying power from a dual-frequency RF source, etching the amorphous carbon layer to form a patterned amorphous carbon layer, and etching feature definitions in the dielectric material layer corresponding to the patterned amorphous carbon layer. The amorphous carbon layer may act as an etch stop, an anti-reflective coating, or both.

REFERENCES:
patent: 4975144 (1990-12-01), Yamazaki et al.
patent: 5022959 (1991-06-01), Itoh et al.
patent: 5262262 (1993-11-01), Yagi et al.
patent: 5461003 (1995-10-01), Havemann et al.
patent: 5674573 (1997-10-01), Mitani et al.
patent: 5759913 (1998-06-01), Fulford, Jr. et al.
patent: 5789320 (1998-08-01), Andricacos et al.
patent: 5830332 (1998-11-01), Babich et al.
patent: 5866920 (1999-02-01), Matsumoto et al.
patent: 5882830 (1999-03-01), Visser et al.
patent: 5900288 (1999-05-01), Kuhman et al.
patent: 5930655 (1999-07-01), Cooney, III et al.
patent: 5981000 (1999-11-01), Grill et al.
patent: 5986344 (1999-11-01), Subramanion et al.
patent: 5998100 (1999-12-01), Azuma et al.
patent: 6008140 (1999-12-01), Ye et al.
patent: 6030901 (2000-02-01), Hopper et al.
patent: 6035803 (2000-03-01), Robles et al.
patent: 6043167 (2000-03-01), Lee et al.
patent: 6054379 (2000-04-01), Yau et al.
patent: 6057226 (2000-05-01), Wong
patent: 6064118 (2000-05-01), Sasaki
patent: 6066577 (2000-05-01), Cooney, III et al.
patent: 6080529 (2000-06-01), Ye et al.
patent: 6098568 (2000-08-01), Raoux et al.
patent: 6140224 (2000-10-01), Lin
patent: 6140226 (2000-10-01), Grill et al.
patent: 6143476 (2000-11-01), Ye et al.
patent: 6153935 (2000-11-01), Edelstein et al.
patent: 6165890 (2000-12-01), Kohl et al.
patent: 6183930 (2001-02-01), Ueda et al.
patent: 6184572 (2001-02-01), Mountsier et al.
patent: 6203898 (2001-03-01), Kohler et al.
patent: 6211065 (2001-04-01), Xi et al.
patent: 6214637 (2001-04-01), Kim et al.
patent: 6214730 (2001-04-01), Cooney, III et al.
patent: 6235629 (2001-05-01), Takenaka
patent: 6291334 (2001-09-01), Somekh
patent: 6316347 (2001-11-01), Chang et al.
patent: 6323119 (2001-11-01), Xi et al.
patent: 6331380 (2001-12-01), Ye et al.
patent: 6333255 (2001-12-01), Sekiguchi
patent: 6346747 (2002-02-01), Grill et al.
patent: 6352922 (2002-03-01), Kim
patent: 6358573 (2002-03-01), Raoux et al.
patent: 6358804 (2002-03-01), Kobayashi et al.
patent: 6380106 (2002-04-01), Lim et al.
patent: 6395650 (2002-05-01), Callegari et al.
patent: 6413852 (2002-07-01), Grill et al.
patent: 6423384 (2002-07-01), Khazeni et al.
patent: 6428894 (2002-08-01), Babich et al.
patent: 6458516 (2002-10-01), Ye et al.
patent: 6541397 (2003-04-01), Bencher
patent: 6541842 (2003-04-01), Meynen et al.
patent: 6573030 (2003-06-01), Fairbairn et al.
patent: 6596627 (2003-07-01), Mandal
patent: 6624064 (2003-09-01), Sahin et al.
patent: 6635583 (2003-10-01), Bencher et al.
patent: 6635735 (2003-10-01), Zhang et al.
patent: 6852647 (2005-02-01), Bencher
patent: 6853043 (2005-02-01), Yeh et al.
patent: 6884733 (2005-04-01), Dakshina-Murthy et al.
patent: 6913992 (2005-07-01), Schmitt et al.
patent: 2001/0007788 (2001-07-01), Chang et al.
patent: 2002/0001778 (2002-01-01), Latchford et al.
patent: 2002/0086547 (2002-07-01), Mui et al.
patent: 2002/0090794 (2002-07-01), Chang et al.
patent: 2003/0091938 (2003-05-01), Fairbairn et al.
patent: 2004/0023502 (2004-02-01), Tzou et al.
patent: 2004/0038537 (2004-02-01), Liu et al.
patent: 2004/0072430 (2004-04-01), Huang et al.
patent: 2004/0166691 (2004-08-01), Nieh et al.
patent: 2004/0180551 (2004-09-01), Biles et al.
patent: 2004/0229470 (2004-11-01), Rui et al.
patent: 103 28 578 (2004-02-01), None
patent: 0 381 109 (1990-01-01), None
patent: 0 901 156 (1999-03-01), None
patent: 09 045633 (1997-02-01), None
patent: 11 026578 (1999-01-01), None
patent: WO 00/05763 (2000-02-01), None
U.S. Appl. No. 10/768,724, filed Jan. 30, 2004.
U.S. Appl. No. 10/800,112, filed Mar. 12, 2004.
U.S. Appl. No. 10/799,147, filed Mar. 12, 2004.
U.S. Appl. No. 10/383,839, filed Mar. 7, 2003.
U.S. Appl. No. 60/565,639, filed on Apr. 26, 2004.
U.S. Appl. No. 60/649,344, filed Feb. 2, 2005.
Liu, “Generating Sub-30nm Poly-Silicon Gates Using PECVD Amorphous Carbon as Hardmask and Anti-Reflective Coating”, Proceedings of the SPIE, Bellingham, VA, US, vol. 5040, No. 1, Feb. 25, 2003, pp. 841-848.
PCT Notification of Transmittal of the International Search Report dated May 31, 2005 for PCT/US05/008070.
PCT Written Opinion dated May 31, 2005 for PCT/US05/008070.
PCT International Search Report for PCT/US05/005855 dated Oct. 13, 2005.
PCT Written Opinion for PCT/US05/005855 dated Oct. 13, 2005.
Chinese Office Action dated Sep. 12, 2008 for Chinese Application No. 200580006997.0.
PCT International Preliminary Report on Patentability and Written Opinion for PCT/US2005/005855, dated Sep. 14, 2006.
Office Action for Taiwan Patent Application No. 094106477 dated Jun. 11, 2009.

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