Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-02
2011-08-02
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21168
Reexamination Certificate
active
07989343
ABSTRACT:
We disclose a method of depositing a metal seed layer on a wafer substrate comprising a plurality of recessed device features. The method comprises depositing a first portion of a copper seed layer on a wafer substrate without excessive build-up on the openings of each of the plurality of recessed device features, while obtaining bottom coverage without substantial sputtering of the bottom surface. The method also comprises depositing a second portion of the metal seed layer while redistributing at least a portion of the bottom coverage material to the sidewalls of each recessed device feature, to provide a uniform seed layer coverage over the interior surface of the recessed device features.
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Chen Fusen E.
Chiang Tony
Chin Barry L.
Ding Peijun
Kohara Gene Y.
Applied Materials Inc.
Church ESQ Shirley L.
Vu David
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