Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-02-25
1999-06-29
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438564, H01L 21336
Patent
active
059181290
ABSTRACT:
A method of doping an integrated circuit device channel in a semiconductor substrate laterally enclosed by an isolation structure is disclosed. The method includes steps of forming a thin oxide layer overlying the integrated circuit device channel and the isolation structure, depositing a polysilicon blanket layer overlying the thin oxide layer, patterning a photoresist mask overlying the polysilicon blanket layer and implanting dopant impurities into the polysilicon blanket layer. The method further includes steps of diffusing the dopant impurities from the polysilicon blanket layer through the thin oxide layer into the integrated circuit device channel, removing the polysilicon blanket layer, and removing the thin oxide layer.
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Dawson Robert
Fulford Jr. H. Jim
Gardner Mark I.
Hause Frederick N.
Michael Mark W.
Advanced Micro Devices , Inc.
Chaudhari Chandra
Koestner Ken J.
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