Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-08-25
1999-03-09
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438614, 438615, 291801, 291802, 257737, 257738, H01L 2144
Patent
active
058800174
ABSTRACT:
A solder bump is stenciled onto a substrate, providing bumped substrate at pitches below 400 microns. The solder is applied through stencil/mask and paste method; the mask, however, remains attached to the substrate during reflow. Pitches of greater than 400 microns may also be obtained through the invention. The invention further provides for generation of uniform, controllable volume metal balls.
Campbell Donald T.
Heydinger Matthew
Kraft Robert E.
Schwiebert Matthew K.
Vander Plas Hubert A.
Hewlett-Packard Co.
Niebling John F.
Zarneke David A.
LandOfFree
Method of bumping substrates by contained paste deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of bumping substrates by contained paste deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of bumping substrates by contained paste deposition will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1320559