Method of based spacer formation for ultra-small sapcer geometri

Details Method of based spacer formation for ultra-small sapcer geometri Method of based spacer formation for ultra-small sapcer geometri

1998-03-09

1999-05-04

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, 438230, H01L 21336

Patent

active

058997210

ABSTRACT:
A transistor and transistor fabrication method are presented wherein ultra small spacers are formed adjacent sidewall surfaces of a gate conductor. A first dielectric material is deposited over a semiconductor topography. The first dielectric is partially removed to expose a portion of the gate conductor, and a second dielectric material is deposited upon the first dielectric material and the gate conductor. The second dielectric material is anisotropically etched such that the second dielectric material is preferentially removed from substantially horizontal surfaces and retained adjacent substantially vertical surfaces. The first dielectric material is then selectively removed from areas not masked by the second dielectric material. The composite spacers thus formed adjacent sidewall surfaces of the gate conductor are thinner than spacers formed using conventional techniques. Sub-0.25-micron transistors having sidewall spacers formed by the process described herein may be less susceptible to deleterious source-side parasitic resistance than transistors having conventionally formed spacers.

REFERENCES:
patent: 4587718 (1986-05-01), Haken et al.
patent: 5194926 (1993-03-01), Hayden
patent: 5501997 (1996-03-01), Lin et al.
patent: 5739573 (1998-04-01), Kawaguchi
patent: 5747373 (1998-05-01), Yu
patent: 5763312 (1998-06-01), Jeng et al.
patent: 5770508 (1998-06-01), Yeh et al.
patent: 5780348 (1998-07-01), Lin et al.

Affiliated with

Also associated with

Rating

Method of based spacer formation for ultra-small sapcer geometri does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of based spacer formation for ultra-small sapcer geometri, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of based spacer formation for ultra-small sapcer geometri will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1865370