Method of and apparatus for processing a workpiece in plasma

Details Method of and apparatus for processing a workpiece in plasma Method of and apparatus for processing a workpiece in plasma

1992-12-02

1994-09-06

McFarlane, Anthony

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429816, 20429831, 20429836, 156345, 156643, 219 7616, 21912141, 31511121, H01L 2102

Patent

active

053445368

ABSTRACT:
An electron cyclotron resonance plasma chemical vapor deposition system has a reaction chamber for introducing a reaction gas therein, the reaction chamber housing a table for supporting a semiconductor wafer. A microwave oscillator is connected to the reaction chamber through a waveguide for generating and introducing a microwave into the reaction chamber to produce a plasma in the reaction chamber for activating the reaction gas to etch or deposit a film on the semiconductor wafer in the reaction chamber. A pair of upper and lower coils is disposed around the reaction chamber for generating respective magnetic fields in opposite directions in the reaction chamber. The magnetic fields cancel out each other creating a region with substantially no flux density in the magnetic fields between the coils. A bias voltage is applied to the table to attract the plasma to the table in a uniform manner.

REFERENCES:
patent: 4585541 (1986-04-01), Miyake et al.
patent: 4662977 (1987-05-01), Motley et al.
patent: 4970435 (1990-11-01), Tanaka et al.
patent: 5124014 (1992-06-01), Foo et al.
patent: 5210466 (1993-05-01), Collins et al.

Affiliated with

Also associated with

Rating

Method of and apparatus for processing a workpiece in plasma does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of and apparatus for processing a workpiece in plasma, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of and apparatus for processing a workpiece in plasma will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1327435