Method of aluminum oxide low pressure chemical vapor deposition

Details Method of aluminum oxide low pressure chemical vapor deposition Method of aluminum oxide low pressure chemical vapor deposition

1995-02-10

1997-09-09

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

438778, 438935, H01L 2166

Patent

active

056656084

ABSTRACT:
A method and apparatus for monitoring and controlling reactant vapors prior to chemical vapor deposition (CVD). The reactant vapors are monitored at full concentration without sampling as they are transported to a CVD reactor. Contaminants detected cause a process controller to switch the transport path to direct reactant vapors to a system pump.

REFERENCES:
patent: 4388342 (1983-06-01), Suzuki et al.
patent: 5138163 (1992-08-01), Butler et al.
patent: 5190913 (1993-03-01), Higashiyama et al.
patent: 5534066 (1996-07-01), O'Neill et al.

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