Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2006-10-03
2006-10-03
Deo, Duy-Vu N. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S754000, C438S756000, C438S757000
Reexamination Certificate
active
07115526
ABSTRACT:
The present invention discloses an electrode structure of a light emitted diode and manufacturing method of the electrodes. After formed a pn junction of a light emitted diode on a substrate, a layer of SiO2 is deposited on the periphery of the die of the LED near the scribe line of the wafer, then a transparent conductive layer is deposited blanketly, then a layer of gold or AuGe etc. is formed with an opening on the center of the die. After forming alloy with the semiconductor by heat treatment to form ohmic contact, a strip of aluminum (Al) is formed on one side of the die on the front side for wire bonding and to be the positive electrode of the LED. The negative electrode is formed on the substrate by metal contact. Another form of the electrode structure of the present invention is making both the positive and negative electrodes on the front side of the LED by etching the p-type semiconductor of the pn junction and forming a strip of negative electrode on the n-type semiconductor, the positive electrode is formed on the p-type semiconductor.
REFERENCES:
patent: 4800170 (1989-01-01), Jain et al.
patent: 5693553 (1997-12-01), Kashihara et al.
patent: 6410386 (2002-06-01), Hsue et al.
patent: 6465853 (2002-10-01), Hobbs et al.
Wolf et al., Silicon Processing for the VLSI Era, vol. 1, 1986, pp. 407-409, 533-535.
Ho Hsieh Yue
Huang Chih-Feng
Liang Jann-Shyang
Perng Baw-ching
Shih-Yi Hsiao
Deo Duy-Vu N.
Grand Plastic Technology Corporation Taiwan
Perkins Coie LLP
LandOfFree
Method for wet etching of high k thin film at low temperature does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for wet etching of high k thin film at low temperature, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for wet etching of high k thin film at low temperature will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3620594