Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-06-21
2009-10-13
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S791000
Reexamination Certificate
active
07601652
ABSTRACT:
Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.
REFERENCES:
patent: 4720395 (1988-01-01), Foster
patent: 4857139 (1989-08-01), Tashiro et al.
patent: 5648114 (1997-07-01), Paz De Araujo et al.
patent: 5716495 (1998-02-01), Butterbaugh et al.
patent: 6265033 (2001-07-01), Hilliard
patent: 7125582 (2006-10-01), McSwiney et al.
patent: 2002/0016084 (2002-02-01), Todd
patent: 2003/0104707 (2003-06-01), Senzaki et al.
patent: 2003/0140941 (2003-07-01), Inushima et al.
patent: 2003/0207547 (2003-11-01), Wang et al.
patent: 2003/0215570 (2003-11-01), Seutter et al.
patent: 2004/0069610 (2004-04-01), Arno et al.
patent: 2004/0121085 (2004-06-01), Wang et al.
patent: 2004/0164293 (2004-08-01), Maloney et al.
patent: 2004/0194706 (2004-10-01), Wang et al.
patent: 2005/0082001 (2005-04-01), Sugiura
patent: 2005/0145177 (2005-07-01), McSwiney et al.
patent: 2005/0241567 (2005-11-01), Scarlete et al.
patent: 2005/0255714 (2005-11-01), Iyer et al.
patent: 2006/0286819 (2006-12-01), Seutter et al.
patent: 2007/0275193 (2007-11-01), Desimone et al.
Iyer, et al., U.S. Appl. No. 11/245,373, filed Oct. 6, 2005.
Smith, et al., U.S. Appl. No. 11/245,758, filed Oct. 7, 2005.
Wang, et al., U.S. Appl. No. 11/155,646, filed Jun. 17, 2005.
Migitaka, “Excellent Silicon Nitride Films Made by Hybride Process and Their Application to a-Si TFTS”, Semioconductor Conference, 2000, CAS 2000 Proceedings, 2000 IEEE, pp. 23-32, vol. 1.
Bergonzo, et al., “Low pressure photodeposition of silicon nitride films using a xenon excimer lamp”, Appl. Phys. Lett. 63 (13), Sep. 1993, p. 1757-1759.
PCT International Search Report for PCT/US06/23915 dated Jul. 14, 2008 (APPM/7647PCT).
Brailove Adam
Ghanayem Steve G.
Iyer R. Suryanarayanan
Morin Jeannot
Seutter Sean M.
Applied Materials Inc.
Patterson & Sheridan LLP
Perkins Pamela E
Smith Zandra V.
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