Method for treating layers of a gate stack

Details Method for treating layers of a gate stack Method for treating layers of a gate stack

2011-03-22

2011-03-22

Roman, Angel (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S287000, C438S795000, C438S798000, C257SE21409, C257SE21347, C257SE21495

Reexamination Certificate

active

07910467

ABSTRACT:
A method for fabricating a semiconductor device with improved performance is disclosed. The method comprises providing a semiconductor substrate; forming one or more gate stacks having an interfacial layer, a high-k dielectric layer, and a gate layer over the substrate; and performing at least one treatment on the interfacial layer, wherein the treatment comprises a microwave radiation treatment, an ultraviolet radiation treatment, or a combination thereof.

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patent: 6767847 (2004-07-01), Hu et al.
patent: 6774045 (2004-08-01), Liu et al.
patent: 7235495 (2007-06-01), Wagener
patent: 2008/0290393 (2008-11-01), Kakehata et al.
patent: 2009/0065849 (2009-03-01), Noda
patent: 2009/0163012 (2009-06-01), Clark et al.

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