Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Plasma generating
Reexamination Certificate
2005-07-19
2005-07-19
Dinh, Trinh Vo (Department: 2821)
Electric lamp and discharge devices: systems
Discharge device load with fluent material supply to the...
Plasma generating
C315S111210, C324S519000, C118S050100
Reexamination Certificate
active
06919689
ABSTRACT:
A plasma processing system having a grounded chamber and an RF power feed connected to a bottom electrode is tested. A first capacitance between the bottom electrode and the grounded chamber is measured at atmosphere. Consumable hardware parts are installed in the chamber. A second capacitance between the bottom electrode and the grounded chamber is measured at vacuum with the grounded chamber including all of the installed consumable hardware parts. The first capacitance measurement and the second capacitance measurement are respectively compared with a first reference value and a second reference value to identify and determine any defects in the plasma processing system. The first and second reference value respectively are representative of the capacitance of a defect-free chamber at atmosphere and the capacitance of a defect-free chamber including all of the installed consumable hardware parts at vacuum.
REFERENCES:
patent: 5565737 (1996-10-01), Keane
patent: 5939886 (1999-08-01), Turner et al.
patent: 6265831 (2001-07-01), Howald et al.
patent: 6326794 (2001-12-01), Lundquist et al.
patent: 6498502 (2002-12-01), Edwards et al.
patent: 2001/0025691 (2001-10-01), Kanno et al.
patent: 2002/0088776 (2002-07-01), Nakano et al.
patent: 2002/0157608 (2002-10-01), Nakano et al.
patent: 2003/0038114 (2003-02-01), Howald
patent: 2003/0178140 (2003-09-01), Hanazaki et al.
patent: 2004/0135590 (2004-07-01), Quon
SmartPIM with ImPrint—A Better, Faster Way to Fault Detection and Classification (FDC), 2001 Scientific Systems, 4 pages.
Avoyan Armen
Jafarian-Tehrani Seyed Jafar
Dinh Trinh Vo
LAM Research Corporation
Lo Thierry K.
Thelen Reid & Priest LLP
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