Cleaning and liquid contact with solids – Processes – For metallic – siliceous – or calcareous basework – including...
Reexamination Certificate
2008-12-03
2011-12-06
Kornakov, Michael (Department: 1714)
Cleaning and liquid contact with solids
Processes
For metallic, siliceous, or calcareous basework, including...
C134S001000, C134S001300, C134S004000
Reexamination Certificate
active
08070882
ABSTRACT:
A method for the wet-chemical treatment of a semiconductor wafer involves: a) rotating a semiconductor wafer; b) applying a cleaning liquid comprising gas bubbles having a diameter of 100 μm or less to the rotating wafer such that a liquid film forms on the wafer; c) exposing the rotating semiconductor wafer to a gas atmosphere containing a reactive gas; and d) removing the liquid film from the wafer.
REFERENCES:
patent: 4871416 (1989-10-01), Fukuda
patent: 5560857 (1996-10-01), Sakon et al.
patent: 5759971 (1998-06-01), Manako
patent: 6517998 (2003-02-01), Noda et al.
patent: 7021319 (2006-04-01), Verhaverbeke
patent: 7037842 (2006-05-01), Verhaverbeke et al.
patent: 2002/0050279 (2002-05-01), Bergman
patent: 2004/0029388 (2004-02-01), Verhaverbeke et al.
patent: 2004/0031503 (2004-02-01), Eitoku
patent: 2004/0097055 (2004-05-01), Henley et al.
patent: 2004/0226654 (2004-11-01), Hongo et al.
patent: 2005/0233922 (2005-10-01), Jung et al.
patent: 2006/0091110 (2006-05-01), Oh
patent: 2007/0068086 (2007-03-01), Akatsuka
patent: 2007/0084481 (2007-04-01), Franklin
patent: 05152203 (1993-06-01), None
patent: 2002110624 (2002-04-01), None
patent: 2002134401 (2002-05-01), None
patent: 2003045842 (2003-02-01), None
patent: 2005268308 (2005-09-01), None
patent: 2006116365 (2006-05-01), None
patent: 2006-237095 (2006-09-01), None
patent: 2006310456 (2006-09-01), None
patent: 2001-56346 (2001-07-01), None
patent: 2002-76563 (2002-10-01), None
patent: 0127986 (2001-04-01), None
Buschhardt Thomas
Feijoo Diego
Haibara Teruo
Mori Yoshihiro
Schwab Guenter
Brooks & Kushman P.C.
Kornakov Michael
Siltronic AG
Whatley Katelyn
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