Method for structuring a photoresist layer

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Forming nonplanar surface

Reexamination Certificate

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C430S324000, C430S326000, C430S330000, C430S270100

Reexamination Certificate

active

06887653

ABSTRACT:
A method for structuring a photoresist layer is described. A substrate has a photoresist layer containing a film-forming polymer that has a photo acid generator that liberates an acid on exposure to light from a defined wavelength range Δλ1. In addition, the polymer has a photo base generator that liberates a base on exposure to light from a defined wavelength range Δλ2. The photoresist layer is first exposed in parts to light from the defined wavelength range Δλ1, the light being chosen so that the photo base generator is substantially inert to the irradiation. The photoresist layer is then exposed to light from the defined wavelength range Δλ2, the light being chosen so that the photo acid generator is substantially inert to the irradiation. The photoresist layer is then heated at which the cleavage reaction catalyzed by the photolytically produced acid takes place, and finally the photoresist layer is developed.

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Hiroshi Ito: “Deep-UV resists: Evolution and status”,Solid State Technology, Jul. 1996, pp. 164-170.

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