Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-16
2007-01-16
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE29193
Reexamination Certificate
active
10627753
ABSTRACT:
A method (and resulting structure) of forming a semiconductor device, includes implanting, on a substrate, a dopant and at least one species, annealing the substrate, the at least one species retarding a diffusion of the dopant during the annealing of the substrate.
REFERENCES:
patent: 5561072 (1996-10-01), Saito
patent: 6069062 (2000-05-01), Downey
patent: 6087209 (2000-07-01), Yeap et al.
patent: 6180476 (2001-01-01), Yu
patent: 6235599 (2001-05-01), Yu
patent: 6372591 (2002-04-01), Mineji et al.
patent: 6380044 (2002-04-01), Talwar et al.
patent: 6380053 (2002-04-01), Komatsu
patent: 6410393 (2002-06-01), Hao et al.
patent: 6426278 (2002-07-01), Nowak et al.
patent: 6518150 (2003-02-01), Matsumoto
patent: 6734527 (2004-05-01), Xiang
patent: 6793731 (2004-09-01), Hsu et al.
patent: 2001/0003364 (2001-06-01), Sugawara et al.
patent: 2003/0049917 (2003-03-01), Noda
patent: 2003/0096490 (2003-05-01), Borland et al.
patent: 2004/0126998 (2004-07-01), Feudel et al.
patent: 2004/0159834 (2004-08-01), Huang et al.
patent: WO 97/42652 (1997-11-01), None
Article by T.H. Huang, et al.: “Influence of Fluorine Preamorphization on the Diffusion and Activation of Low-Energy Implanted Boron During Rapid Thermal Annealing”, Applied Physics Letters, American Institute of Physics, NY, US vol. 65, No. 14, Oct. 3, 1994, pp. 1829-1831.
Article by S. Saito, et al.: “Defect Reduction by MeV ion Implantation for Shallow Junction Formation”, Applied Physics Letters, American Institute of Physics, vol. 63, No. 2, Jul. 12, 1993, pp. 197-199.
PCT International Search Report dated Oct. 8, 2004.
PCT Written Opinon of the International Searching Authority, EPO—Jan. 2004.
Article by S. Saito, et al.: Defect Reduction by MeV i on Implantation for Shallow Junction Formation, Applied Physics Letters, American Institute by Physics, vol. 63, No. 2, Jul. 12, 1993, pp. 197-199.
PCT International Search Report dated Oct. 8, 2004.
PCT Written Opinion of the International Searching Authority, date not available or known.
Lee Kam-Leung
Zhu Huilong
International Business Machines - Corporation
Kebede Brook
McGinn IP Law Group PLLC
Tuchman, Esq. Ido
LandOfFree
Method for slowing down dopant-enhanced diffusion in... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for slowing down dopant-enhanced diffusion in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for slowing down dopant-enhanced diffusion in... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3765597