Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-27
2009-12-15
Sefer, A. (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21632, C257SE21633
Reexamination Certificate
active
07632729
ABSTRACT:
A method of manufacturing a semiconductor device is disclosed. The method provides a semiconductor substrate with at least a PMOS device and at least an NMOS device thereon. A first insulating layer is formed overlying the NMOS and PMOS devices. A second insulating layer is formed overlying the first insulating layer. The second insulating layer overlying the PMOS device is thinned to leave portion of the second insulating layer. A first thermal treatment is performed on the NMOS and PMOS devices. The second insulating layer overlying the NMOS device and the remaining portion of the second insulating layer overlying the PMOS device are removed and the first insulating layer overlying the NMOS and PMOS devices is thinned to leave a remaining portion thereof.
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Michael Quirk and Julian Serda, Semiconductor Manufacturing Technology, Prentice Hall, pp. 271-273.
Chen Ryan Chia-Jen
Cheng Chung-Long
Chuang Harry
Chung Sheng-Chen
Guo Wen-Huei
Birch & Stewart Kolasch & Birch, LLP
Parker Allen L
Sefer A.
Taiwan Semiconductor Manufacturing Co. Ltd.
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