Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-15
2005-11-15
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S260000, C257S258000, C257S298000, C257S314000, C257S500000, C365S185290
Reexamination Certificate
active
06964902
ABSTRACT:
Nanoclusters are blanket deposited on an integrated circuit and then removed from regions where the nanoclusters are not desired. A sacrificial layer is formed in those regions where the nanoclusters are not desired prior to the blanket deposition. The nanoclusters and the sacrificial layer are then removed. In one form, the sacrificial layer includes a deposited nitride containing or oxide containing layer. Alternatively, the sacrificial layer includes at least one of a pad oxide or a pad nitride layer previously used to form isolation regions in the substrate. Nanocluster devices and non-nanocluster devices may then be integrated onto the same integrated circuit. The use of a sacrificial layer protects underlying layers thereby preventing the degradation of performance of the subsequently formed non-nanocluster devices.
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Anderson Steven G. H.
Chindalore Gowrishankar L.
Muralidhar Ramachandran
Steimle Robert F.
Swift Craig T.
Chiu Joanna G.
Keshavan Belur V.
King Robert L.
Smith Matthew
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