Method for removing a halogen-containing residue

Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...

Reexamination Certificate

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C216S068000, C216S069000, C216S073000, C438S715000

Reexamination Certificate

active

07846347

ABSTRACT:
The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue.

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