Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2007-07-19
2010-12-07
Tran, Binh X (Department: 1713)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C216S068000, C216S069000, C216S073000, C438S715000
Reexamination Certificate
active
07846347
ABSTRACT:
The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue.
REFERENCES:
patent: 4936967 (1990-06-01), Ikuhara et al.
patent: 5174856 (1992-12-01), Hwang et al.
patent: 5200031 (1993-04-01), Latchford et al.
patent: 5221424 (1993-06-01), Rhoades
patent: 5306671 (1994-04-01), Ogawa et al.
patent: 5384009 (1995-01-01), Mak et al.
patent: 5397432 (1995-03-01), Konno et al.
patent: 5545289 (1996-08-01), Chen et al.
patent: 5871658 (1999-02-01), Tao et al.
patent: 5877032 (1999-03-01), Guinn et al.
patent: 5986747 (1999-11-01), Moran
patent: 6133102 (2000-10-01), Wu
patent: 6171981 (2001-01-01), Byun
patent: 6204203 (2001-03-01), Narwankar et al.
patent: 6265297 (2001-07-01), Powell
patent: 6331380 (2001-12-01), Ye et al.
patent: 6352870 (2002-03-01), Lansford
patent: 6492186 (2002-12-01), Han et al.
patent: 6521003 (2003-02-01), Swanepoel et al.
patent: 6562713 (2003-05-01), Belyansky et al.
patent: 6774045 (2004-08-01), Liu et al.
patent: 2002/0198682 (2002-12-01), Huang et al.
patent: 2003/0015660 (2003-01-01), Shishido et al.
patent: 2003/0183245 (2003-10-01), Sheu
patent: 2004/0007561 (2004-01-01), Nallan et al.
Davis Matthew Fenton
Kawaguchi Mark N.
Papanu James S.
Williams Scott
Applied Materials Inc.
Moser IP Law Group
Taboada Alan
Tran Binh X
LandOfFree
Method for removing a halogen-containing residue does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for removing a halogen-containing residue, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for removing a halogen-containing residue will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4187434