Coating apparatus – Interfacing control of plural operations
Reexamination Certificate
2007-11-13
2007-11-13
Zervigon, Rudy (Department: 1763)
Coating apparatus
Interfacing control of plural operations
C118S696000, C118S697000, C118S698000, C118S704000, C156S345240
Reexamination Certificate
active
09362504
ABSTRACT:
A layer of reduced stress is formed on a substrate using an HDP-CVD system by delaying or interrupting the application of capacitively coupled RF energy. The layer is formed by introducing a process gas into the HDP system chamber and forming a plasma from the process gas by the application of RF power to an inductive coil. After a selected period, a second layer of the film is deposited by maintaining the inductively-coupled plasma and biasing the plasma toward the substrate to enhance the sputtering effect of the plasma. In a preferred embodiment, the deposited film is a silicon oxide film, and biasing is performed by application of capacitively coupled RF power from RF generators to a ceiling plate electrode and wafer support electrode.
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Narwankar Pravin
Ravi K. V.
Rossman Kent
Sahin Turgut
Applied Materials Inc.
Zervigon Rudy
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