Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-08-11
1999-09-21
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438629, 438680, 438648, H01L 21443
Patent
active
059566094
ABSTRACT:
A method is described for improving the step coverage of tungsten interconnects and plugs when deposited at low temperatures into contact/via openings having high aspect ratios. The depositions are made at pressures between 4.5 and 100 Torr in a CVD tool. The method includes a first nucleation step, and a second step for filling the contact/via openings wherein deposition conditions favor good step coverage. For forming an interconnect and a third deposition step, providing moderate step coverage and low stress, is used to build up the interconnect. The high pressures permit deposition at practical rates at low temperatures. In addition the high pressures also permit application of backside gas pressure to the wafer during deposition, thereby improving the thermal contact between the wafer and the heated substrate holder. This contributes significantly to stress reduction and improved step coverage.
REFERENCES:
patent: 5028565 (1991-07-01), Chang et al.
patent: 5407698 (1995-04-01), Emesh
patent: 5462890 (1995-10-01), Hwang et al.
patent: 5489552 (1996-02-01), Merchant et al.
patent: 5679405 (1997-10-01), Thomas et al.
patent: 5835334 (1998-11-01), McMillin et al.
S. Wolf, "Silicon Processing For The VLSI ERA--vol. 2" Lattice Press, Sunset Beach, CA. 1990, p. 202.
Chou Ken-Shen
Dun Jowei
Lee Jiun-Chung
Wang Hui-Ling
Ackerman Stephen B.
Everhart Caridad
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Method for reducing stress and improving step-coverage of tungst does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for reducing stress and improving step-coverage of tungst, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for reducing stress and improving step-coverage of tungst will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-90969