Method for reducing defects in post passivation interconnect...

Details Method for reducing defects in post passivation interconnect... Method for reducing defects in post passivation interconnect...

2006-04-11

2006-04-11

Nguyen, Ha Tran (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S106000, C438S622000, C438S692000, C438S706000

Reexamination Certificate

active

07026233

ABSTRACT:
A method of forming post passivation interconnects for an integrated circuit is disclosed. A passivation layer of a non-oxide material is formed over the integrated circuit. A buffer layer is then formed over the passivation layer. The buffer layer preferably is a silicon oxide layer with a thickness substantially smaller than a thickness of the passivation layer. A post passivation metal layer is deposited over the buffer layer and a connection pattern is formed in the post passivation metal layer.

REFERENCES:
patent: 5075965 (1991-12-01), Carey et al.
patent: 5880529 (1999-03-01), Barrow
patent: 6022809 (2000-02-01), Fan
patent: 6165886 (2000-12-01), Lin et al.
patent: 6174824 (2001-01-01), Michael et al.
patent: 6261944 (2001-07-01), Mehta et al.
patent: 6313024 (2001-11-01), Cave et al.
patent: 6455885 (2002-09-01), Lin
patent: 6495442 (2002-12-01), Lin et al.
patent: 2001/0045651 (2001-11-01), Saito et al.
patent: 1 168 437 (2002-01-01), None
patent: 2002-075981 (2002-03-01), None
patent: 502377 (2002-09-01), None

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