Method for providing fluorine barrier layer between conductor an

Details Method for providing fluorine barrier layer between conductor an Method for providing fluorine barrier layer between conductor an

1997-09-25

2000-05-23

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438778, H01L 2131, H01L 21469

Patent

active

060665777

ABSTRACT:
Method of improving the resistance of a metal against degradation from exposure to fluorine released from a fluorine-containing material by forming a fluorine-free silicon dioxide barrier layer between the insulator material and the metal. The invention is especially useful in improving corrosion and poisoning resistance of metallurgy, such as aluminum metallurgy, in semiconductor structures. The invention also covers integrated circuit structures made by this method.

REFERENCES:
patent: 4300989 (1981-11-01), Chang
patent: 5011732 (1991-04-01), Takeuchi et al.
patent: 5219791 (1993-06-01), Freiberger
patent: 5306671 (1994-04-01), Ogawa et al.
patent: 5380397 (1995-01-01), Fukuyama et al.
patent: 5384281 (1995-01-01), Kenney et al.
patent: 5397748 (1995-03-01), Watanabe et al.
patent: 5423945 (1995-06-01), Marks et al.
patent: 5451543 (1995-09-01), Woo et al.
patent: 5466638 (1995-11-01), Eguchi
patent: 5497545 (1996-03-01), Watanabe et al.
patent: 5527718 (1996-06-01), Seita et al.
patent: 5644166 (1997-07-01), Honeycutt et al.
patent: 5661334 (1997-08-01), Akram
patent: 5850102 (1998-12-01), Matsuno
S. M. Sze, VLSI Technology, second edition, p233-234,266-267, 1988.
Japanese Patent Appl. Abstract, JP 07094606 (publ. Apr. 7, 1995), 1995 Derwent Info. Ltd.
1990 Proceedings, Seventh International IEEE VLSI Multilevel Interconnection Conference, C.M. Dalton, p. 289-95, Jun. 1990.

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