Method for protecting against deposition on a selected region of

Coating processes – Coating by vapor – gas – or smoke

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427255, 4272551, 4272552, 4272553, 427314, C23C 1600

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active

058718117

ABSTRACT:
A method for protecting a selected area of a substrate against deposition on the selected area. The method includes the steps of flowing a process gas into a substrate processing chamber and flowing a purge gas to the selected area of the substrate to prevent the process gas from contacting the selected area or minimize contact between the process gas and the selected area. In various embodiments the selected area is a backside periphery of the substrate or the edge of the substrate. Also in these embodiments, the process gas is flowed into a deposition zone in order to deposit a thin film layer over an upper surface of the substrate, and a flow of the process and purge gas is established such that the process gas flows radically across the upper surface of the substrate, combines with the purge gas near an edge of the substrate and exits the processing chamber through an exhaust system.

REFERENCES:
patent: 3200019 (1965-08-01), Scott et al.
patent: 3330694 (1967-07-01), Black et al.
patent: 3627590 (1971-12-01), Mammel
patent: 3661637 (1972-05-01), Sirtl
patent: 3721210 (1973-03-01), Helms et al.
patent: 3791342 (1974-02-01), Boyer et al.
patent: 3854443 (1974-12-01), Baerg
patent: 3934060 (1976-01-01), Burt et al.
patent: 3955163 (1976-05-01), Novak
patent: 4002512 (1977-01-01), Lim
patent: 4261762 (1981-04-01), King
patent: 4282268 (1981-08-01), Priestly et al.
patent: 4313783 (1982-02-01), Davies et al.
patent: 4457359 (1984-07-01), Holden
patent: 4466872 (1984-08-01), Einbinder
patent: 4492716 (1985-01-01), Yamazaki
patent: 4496609 (1985-01-01), McNeilly et al.
patent: 4503807 (1985-03-01), Nakayama et al.
patent: 4508161 (1985-04-01), Holden
patent: 4512391 (1985-04-01), Harra
patent: 4527620 (1985-07-01), Pederson et al.
patent: 4535228 (1985-08-01), Mimura et al.
patent: 4550684 (1985-11-01), Mahawili
patent: 4563240 (1986-01-01), Shibata et al.
patent: 4565601 (1986-01-01), Kakehi et al.
patent: 4567938 (1986-02-01), Turner
patent: 4575408 (1986-03-01), Bok
patent: 4576698 (1986-03-01), Gallagher et al.
patent: 4603466 (1986-08-01), Morley
patent: 4615755 (1986-10-01), Tracy et al.
patent: 4625678 (1986-12-01), Shioya et al.
patent: 4640221 (1987-02-01), Barbee et al.
patent: 4640224 (1987-02-01), Bunch et al.
patent: 4647266 (1987-03-01), Turner et al.
patent: 4671204 (1987-06-01), Ballou
patent: 4680061 (1987-07-01), Lamont, Jr.
patent: 4687682 (1987-08-01), Koze
patent: 4693211 (1987-09-01), Ogami et al.
patent: 4695700 (1987-09-01), Provence et al.
patent: 4702936 (1987-10-01), Maeda et al.
patent: 4709655 (1987-12-01), Van Mastrigt
patent: 4717596 (1988-01-01), Barbee et al.
patent: 4724621 (1988-02-01), Hobson et al.
patent: 4731255 (1988-03-01), Maeda et al.
patent: 4738748 (1988-04-01), Kisa
patent: 4745088 (1988-05-01), Inoue et al.
patent: 4747368 (1988-05-01), Brien et al.
patent: 4767641 (1988-08-01), Kieser et al.
patent: 4768464 (1988-09-01), Hayashi et al.
patent: 4790262 (1988-12-01), Nakayama et al.
patent: 4791398 (1988-12-01), Sittler et al.
patent: 4845054 (1989-07-01), Mitchener
patent: 4857142 (1989-08-01), Syverson
patent: 4859625 (1989-08-01), Matsumoto
patent: 4872947 (1989-10-01), Wang et al.
patent: 4892753 (1990-01-01), Wang et al.
patent: 4990374 (1991-02-01), Keeley et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5028566 (1991-07-01), Lagendijk
patent: 5094885 (1992-03-01), Selbrede
patent: 5124014 (1992-06-01), Foo et al.
patent: 5133284 (1992-07-01), Thomas et al.
patent: 5230741 (1993-07-01), van de Ven et al.
patent: 5238499 (1993-08-01), van de Ven et al.
patent: 5354715 (1994-10-01), Wang et al.
patent: 5362526 (1994-11-01), Wang et al.
patent: 5374594 (1994-12-01), van de Ven et al.
patent: 5447570 (1995-09-01), Schmitz et al.
patent: 5535834 (1996-07-01), Turner
patent: 5542298 (1996-08-01), Holden
M. King et al., "Experiments on Gas Cooling of Wafers", Nuclear Instruments and Methods, pp. 169-173, (1981).
E. Bogle-Rohwer et al., "Wall Profile Control in a Triode Etcher", Solid State Technology, pp. 251-255, (Apr. 1985).
W.N. Hammer, "Cooling Ion-Implantation Target", IBM Technical Disclosure Bulletin, vol. 19, No. 6, pp. 2270-2271, (Nov. 1976).
F.T. Turner et al., "Advances in Cassette-to-Cassette Sputtercoating Systems*", Solid State Technology, pp. 155-123, (Jul. 1993).
V. Hoffman et al., "Individual Water Metallization Utilizing Load-Locked, Close-Coupled Conical Magnetron Sputtering", Solid State Technology, pp. 105-111, (Feb. 1981).
P.S. Burggraaf, "Plasma Deposition Product Trends", Semiconductor International, pp. 23-32, (Mar. 1980).
E. Tanikawa et al., "Chemical Vapor Deposition in an Evacuated System", Chemical Vapor Deoposition (Wakefield and Blocher eds), pp. 261-275, (1973).
R.A. Connell et al., "Magnetically Shaped R.F. Discharge for Polymer Film Formation", J. Electrochem. Soc., vol. 112, pp. 1198-1200, (1965).
"Part 2b-Deposited Dielectrics for VLSI", Semiconductor International, Werner Kern, RCA Laboratories, David Sarnoff Research Center, Princeton, NJ, pp. 122-129, (Jul., 1985).
A.C. Adams, "Dielectric and Polysilicon Film Deposition", VLSI Technology (McGraw Hill New York), pp. 93-129, (1983).
D.N.K. Wang et al., "Advanced CVD Technology", Proc. 1st International Symposium ULSI Science and Technology, pp. 712-723, (1987).
A.C. Adams, "Plasma-Assisted Deposition of Dielectric Films", Proceedings of the Symposium of on Reduced Temperature Processing for VLSI (eds Reig and Srinivasas), pp. 111-131, (1986).
Jiang Ruolian et al., "Plasma-Enhanced CVD SiO.sub.2 Films on InP and Study of C-V Characteristics in InP-MIS Structures", Chinese Journal of Semiconductors, vol. 6, No. 4, pp. 429-432 (1985).
K.P. Pande et al., A Novel Low-Temperature Method of SiO.sub.2 Film Deposition for MOSFET Applications, J. Electronic Materials, vol. 13, No. 3, pp. 593-602 (1984).
U. Mackens et al., "Plasma-Enhanced Chemically Vapour-Deposited Silicon Dioxide for Metal/Oxide/Semiconductor Structures on InSb", Thin Solid Films, vol. 97, pp. 53-61, (1982).
J. Woodward et al., "The Deposition of Insulators Onto InP Using Plasma-Enhanced Chemical Vapour Deposition*", Thin Solid Films, vol. 85, pp. 61-69, (1981).
E.B. Priestley et al., "Deposition and Characterization of Thin SiO.sub.2 Films", Thin Solid Films, vol. 69, pp. 39-52, (1980).
P. Mazerolles et al., "Formation of Amorphous Semicondctors by Chemical Vapour Deposition From Organogermanium Compounds*", Silicon, Germanium, Tin and Lead Compounds, pp. 155-183, (ed. Gielen 1986).
A.K. Sinha, "Plasma Enhanced Chemical Vapor Deposition-A Review", Electrochem. Soc. Ext., Abstract No. 242, pp. 625-627, (1976).
H.F. Sterling et al., "Chemical Vapour Deposition Promoted by r.f. Discharge", Solid-State Electronics, vol. 8, pp. 653-654, (1965).
L. L. Alt. et al., "Low-Temperature Deposition of Silicon Oxide Films", J. Electrochem. Soc., vol. 110, p. 465, (1963).
K.M. Eisele, "Etching of SiO.sub.2 In a Narowly Confined Plasma of High Power Density", J. Vac. Sci Technol. B4(5), pp. 1227-1232, (Sep./Oct. 1986).
G.S. Oehrlein, "Investigation of Reactive-Ion-Etching-Related Fluorocarbon Film Deposition Onto Silicon and a New Method for Surface Residue Removal", J. Electrochem. Soc.: Solid-State Science and Technology, pp. 1002-1008, (May 1986).
Chemical Abstracts, vol. 101, No. 20, p. 292, (Nov. 1984).
T. Fujino et al., "Preparation and Application of Organosilicon Compounds for CVD Process", Oyo Buturi, vol. 53, No. 11, pp. 956-961, (Nov. 1984).
D.J. DiMaria et al., "Use of Composite Silicon-Rich SiO.sub.2 and SiO.sub.2 Layers of Off-Stoichio-Metric CVD SiO.sub.2 Layers for Improvement of Poly 1 to Poly 2 Dielectric", IBM Technical Disclosure Bulletin, vol. 25, No. 12, p. 6417, (May 1983).
J.S. Basi et al., "Plasma-Oxide-Filled Deep Dielectric Isolation", IBM Technical Disclosure Bulletin, vol. 25, No. 8, pp. 4405-4406, (Jan. 1983).
J.P. Gerault et al., "Elaboration et Caracterisation de Couches Minces de Carbure de Silicium Amorphe non Stoechiometrique: Comparison de Properietes des Materiaux Prepares Par CVD et Plasma Froid", Ann. Chim. Fr., vol. 8, pp. 163-174, (1983).
J.P. Gerault et a

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