Method for protecting a transistor gate from charge damage

Details Method for protecting a transistor gate from charge damage Method for protecting a transistor gate from charge damage

1999-07-28

2000-09-12

Fourson, George

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

438618, 438669, 438720, H01L 2128, H01L 213065

Patent

active

061177148

ABSTRACT:
A method and apparatus for preventing charge damage to a protected structure during processing of a semiconductor device. A first source/drain region of a protection transistor is coupled to a protected transistor gate. A second source/drain region of the protection transistor is coupled to ground. The protection transistor is then turned on during the processing of the device to ground the protected transistor gate.

REFERENCES:
patent: 4941028 (1990-07-01), Chen et al.
patent: 5760455 (1998-06-01), Diaz
patent: 5793069 (1998-08-01), Schuelein

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