Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-12-02
2000-08-08
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438253, 438254, 438396, 438397, 438398, H01L 218242
Patent
active
061001392
ABSTRACT:
Three independent methods for producing a semiconductor device which acts as a monolithic capacitor including a first embodiment having a step for removing SiO.sub.2 particles deposited in space remained under a conductive polycrystalline Si layer having a rugged surface, for the purpose to eliminate possibilities in which dust is produced in the process, a second embodiment having a step for producing an SiO.sub.2 layer on a conductive polycrystalline Si layer having a rugged surface employing a CVD process which employs thermal decomposition of TEOS in an excess volume of O.sub.3 in which no SiO.sub.2 particles are produced in space remained under a conductive polycrystalline Si layer having a rugged surface and a third embodiment in which a step for producing a conductive polycrystalline Si layer under a conductive polycrystalline Si layer having a rugged surface is eliminated, for the purpose to eliminate possibilities in which dust is produced in the process.
REFERENCES:
patent: 5162248 (1992-11-01), Dennison et al.
patent: 5623243 (1997-04-01), Watanabe et al.
patent: 5763286 (1998-06-01), Figura et al.
patent: 5770500 (1998-06-01), Batra et al.
patent: 5827766 (1998-10-01), Lou
patent: 5874334 (1999-02-01), Jenq et al.
patent: 6004857 (1999-12-01), Hsiao et al.
patent: 6010942 (2000-01-01), Chien et al.
M. Yoshimaru et al., "Rugged Surface Poly-Si Electrode and Low Temperature Deposited Si3N4 for 64MBit and Beyond STC Dram Cell", IEDM 90, 1990, pp. 659-662, (IEEE).
S.P. Sim et al., "A new Stacked SMVP (Surrounded Micro Villus Patterning) Cell for 256 Mega and 1 Giga bit DRAMs", Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, 1993, pp. 886-888.
Jr. Carl Whitehead
OKI Electric Industry Co., Ltd.
Thomas Toniae M.
LandOfFree
Method for producing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for producing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for producing semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1149519