Method for producing insulation structures

Details Method for producing insulation structures Method for producing insulation structures

2011-01-04

2011-01-04

Alanko, Anita K (Department: 1713)

Etching a substrate: processes

Etching of semiconductor material to produce an article...

C216S041000, C216S046000, C216S049000, C216S057000, C216S067000, C216S079000, C216S099000, C438S052000, C438S053000, C438S696000, C438S700000, C438S704000, C438S719000, C438S739000, C438S753000

Reexamination Certificate

active

07862731

ABSTRACT:
To form an isolation structure in a semiconductor substrate, at least two trenches are formed with a rib therebetween in the semiconductor substrate, and then the semiconductor material in the area of the trenches and particularly the rib is converted to an electrically insulating material. For example, this is accomplished by thermal oxidation of silicon semiconductor material of the rib.

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