Method for producing a trench transistor and trench transistor

Details Method for producing a trench transistor and trench transistor Method for producing a trench transistor and trench transistor

2006-09-28

2009-10-20

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S300000, C257S401000, C438S270000

Reexamination Certificate

active

07605032

ABSTRACT:
In a method for producing a trench transistor, a substrate of a first conduction type is provided and a trench in the substrate and a gate dielectric in the trench are formed. A first conductive filling in the trench as a gate electrode on the gate dielectric and first source and drain regions are formed. An etched-back first conductive filling is produced by etching back the first conductive filling down to a depth below the first source and drain regions and second source and drain regions are formed. The second source and drain regions adjoin the first source and drain regions and extend to a depth at least as far as the etched-back first conductive filling. An insulation spacer above the etched-back first conductive filling is formed in the trench and a second conductive filling is provided in the trench as an upper part of the gate electrode.

REFERENCES:
patent: 5821591 (1998-10-01), Krautschneider et al.
patent: 6844591 (2005-01-01), Tran
patent: 2003/0119264 (2003-06-01), Park
German Office Action dated Jul. 4, 2006.

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