Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-05
2006-12-05
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S258000, C438S259000, C438S255000, C438S264000, C438S266000, C438S267000, C438S424000, C257S315000, C257S319000, C257SE21177
Reexamination Certificate
active
07144773
ABSTRACT:
A method for forming a split gate flash device is provided. In one embodiment, a semiconductor substrate with a dielectric layer formed thereover is provided. A conductor layer is formed overlying the dielectric layer. A masking layer is deposited overlying the conductor layer. A light sensitive layer is formed overlying the masking layer. The light sensitive layer is patterned and etched to form a pattern of openings therein. The masking layer and the conductor layer are etched according to the pattern of openings in the light sensitive layer. The conductor layer is etched at the outer surface area between the conductor layer and the dielectric layer to form undercuts. The dielectric layer is etched to form a notch profile at the outer surface area between the conductor layer and the dielectric layer and portions of the substrate are etched to form a plurality of trenches. An isolation layer is filled over the plurality of trenches and the masking layer. The masking layer and portions of the conductor layer and isolation layer are etched away, wherein a portion of the isolation layer is preserved in the notch profile.
REFERENCES:
patent: 2003/0124800 (2003-07-01), Park et al.
patent: 2003/0203571 (2003-10-01), Rabkin et al.
patent: 2004/0241942 (2004-12-01), Hsieh
Liu Shih-Chang
Lo Chi-Hsin
Shiau Gwo-Yuh
Tsai Chia-Shiung
Ahmadi Mohsen
Lebentritt Michael
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
LandOfFree
Method for preventing trenching in fabricating split gate... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for preventing trenching in fabricating split gate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for preventing trenching in fabricating split gate... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3714277