Method for preparing a trench capacitor structure

Details Method for preparing a trench capacitor structure Method for preparing a trench capacitor structure

2008-09-02

2008-09-02

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S392000, C438S554000, C438S561000, C438S564000

Reexamination Certificate

active

11561957

ABSTRACT:
A method for preparing a trench capacitor structure first forms at least one trench in a substrate, and forms a capacitor structure in the bottom portion of the trench, wherein the capacitor structure includes a buried bottom electrode positioned on a lower outer surface of the trench, a first dielectric layer covering an inner surface of the bottom electrode and a top electrode positioned on the surface of the dielectric layer. Subsequently, a collar insulation layer is formed on the surface of the first dielectric layer above the top electrode, and a first conductive block is then formed in the collar insulation layer. A second conductive block with dopants is formed on the first conductive block, and a thermal treating process is performed to diffuse the dopants from the second conductive block into an upper portion of the semiconductor substrate to form a buried conductive region.

REFERENCES:
patent: 5360758 (1994-11-01), Bronner et al.
patent: 5543348 (1996-08-01), Hammerl et al.
patent: 5618751 (1997-04-01), Golden et al.
patent: 5981332 (1999-11-01), Mandelman et al.
patent: 6225158 (2001-05-01), Furukawa et al.

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