Method for prediction of premature dielectric breakdown in a...

Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed

Reexamination Certificate

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C257SE21521

Reexamination Certificate

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08053257

ABSTRACT:
The invention predicts premature dielectric breakdown in a semiconductor. At least one dielectric breakdown mode is calculated for a layer within chips comprising a semiconductor wafer lot. If only one mode is calculated, that is the best calculated mode. If multiple modes can be calculated, a best mode that most accurately represents dielectric breakdown for the semiconductor wafer lot is determined. Premature dielectric breakdown will be associated with any semiconductor with a breakdown voltage less than a predetermined standard deviation from the best calculated mode.

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Dielectric Breakdown Identification For VLSI R.A. Carballo and G.D. O'Rourke vol. 24 No. 10—Mar. 1982 Non Patent Literature—IBM TDB 03-82—p. 5169.

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