Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
2008-04-02
2011-11-08
Coleman, William D (Department: 2823)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
C257SE21521
Reexamination Certificate
active
08053257
ABSTRACT:
The invention predicts premature dielectric breakdown in a semiconductor. At least one dielectric breakdown mode is calculated for a layer within chips comprising a semiconductor wafer lot. If only one mode is calculated, that is the best calculated mode. If multiple modes can be calculated, a best mode that most accurately represents dielectric breakdown for the semiconductor wafer lot is determined. Premature dielectric breakdown will be associated with any semiconductor with a breakdown voltage less than a predetermined standard deviation from the best calculated mode.
REFERENCES:
patent: 4904946 (1990-02-01), Hirai
patent: 5202640 (1993-04-01), Schaaf et al.
patent: 5420513 (1995-05-01), Kimura
patent: 5822717 (1998-10-01), Tsiang et al.
patent: 6014034 (2000-01-01), Arora et al.
patent: 6014734 (2000-01-01), Tran et al.
patent: 6043662 (2000-03-01), Alers et al.
patent: 6047243 (2000-04-01), Bang et al.
patent: 6351135 (2002-02-01), Kim
patent: 6465266 (2002-10-01), Yassine et al.
patent: 6489783 (2002-12-01), Liu et al.
patent: 6583641 (2003-06-01), Wang et al.
patent: 6602729 (2003-08-01), Lin
patent: 6781401 (2004-08-01), Kim
patent: 6996447 (2006-02-01), Onishi et al.
patent: 7106087 (2006-09-01), Okada
patent: 2002/0033710 (2002-03-01), Kim
patent: 2004/0027149 (2004-02-01), Aitren et al.
patent: 2006/0115910 (2006-06-01), Okada
Dielectric Breakdown Identification For VLSI R.A. Carballo and G.D. O'Rourke vol. 24 No. 10—Mar. 1982 Non Patent Literature—IBM TDB 03-82—p. 5169.
Barile Conrad A.
Chanda Kaushik
Clevenger Lawrence A.
Cowley Andrew P.
Edwards Robert D.
Brown Katherine S.
Coleman William D
International Business Machines - Corporation
Jaklitsch Lisa U.
LandOfFree
Method for prediction of premature dielectric breakdown in a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for prediction of premature dielectric breakdown in a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for prediction of premature dielectric breakdown in a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4261062