Static information storage and retrieval – Read/write circuit – Precharge
Patent
1991-07-02
1993-11-16
Sikes, William L.
Static information storage and retrieval
Read/write circuit
Precharge
365193, G11C 700
Patent
active
052629953
ABSTRACT:
A method for maintaining a stable input/output line precharging and equalizing level and performing fast data access during active cycle of a row address strobe signal. In the inventive semiconductor memory device reading out through bit lines information stored in a memory cells, producing the read out information through a selected column line, and precharging or equalizing the input/output lines to a predetermined level by using a first and second precharging circuits connected between the input/output lines, a first precharging signal in accordance with a address for selecting a word line is supplied to the first precharging circuit, during a time interval before the address signal is applied to the first precharging circuit. Then, a second precharging signal in accordance with the address and a column line selecting signal is supplied to the second precharging circuit, during a time interval from receipt of the address signal up to a time when the column line selecting signal is enabled, and the input/output lines are connected to the bit lines with a predetermined potential difference therebetween, in accordance with the column line selecting signal. Thereafter, the second precharging signal is supplied to the second precharging circuit, after the column lines selecting signal is disabled, and then supply of the second precharging signal is completed when the address signal is completed, and the first precharging signal is supplied to the first precharging circuit.
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patent: 4757215 (1988-07-01), Seo
patent: 4802129 (1989-01-01), Hoekstra et al.
patent: 4996671 (1991-02-01), Suzuki et al.
patent: 5043945 (1991-08-01), Bader
patent: 5047984 (1991-09-01), Monden
patent: 5138578 (1992-08-01), Fujii
Bushnell Robert E.
Samsung Electronics Co,. Ltd.
Sikes William L.
Tran Toan
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