Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Reexamination Certificate
2005-09-07
2011-11-22
Hendricks, Keith (Department: 1724)
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
C204S192120, C204S192150
Reexamination Certificate
active
08062484
ABSTRACT:
A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor, includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target, introducing a carrier gas into the vacuum chamber, and establishing a deposition rate on the wafer by applying D.C. power to the copper target while establishing a plasma ionization fraction by applying VHF power to the copper target. The method can further include promoting re-sputtering of copper on vertical surfaces on the wafer by coupling HF or LF power to the wafer. The method preferably includes maintaining a target magnetic field at the target and scanning the target magnetic field across the target.
REFERENCES:
patent: 3461054 (1969-08-01), Vrantley
patent: 3661758 (1972-05-01), Jackson et al.
patent: 3669871 (1972-06-01), Elmgren et al.
patent: 3681277 (1972-08-01), Szupillo
patent: 4539068 (1985-09-01), Takagi et al.
patent: 4585537 (1986-04-01), Nakayama et al.
patent: 4714536 (1987-12-01), Freeman et al.
patent: 4837185 (1989-06-01), Yau et al.
patent: 4874494 (1989-10-01), Ohmi
patent: 4963239 (1990-10-01), Shimamura et al.
patent: 4999096 (1991-03-01), Nihei et al.
patent: 5110438 (1992-05-01), Ohmi et al.
patent: 5126023 (1992-06-01), Huang et al.
patent: RE34106 (1992-10-01), Ohmi
patent: 5252194 (1993-10-01), Demaray et al.
patent: 5308793 (1994-05-01), Taguchi et al.
patent: 5320728 (1994-06-01), Tepman
patent: 5362672 (1994-11-01), Ohmi et al.
patent: 5486492 (1996-01-01), Yamamoto et al.
patent: 5507930 (1996-04-01), Yamashita et al.
patent: 5510011 (1996-04-01), Okamura et al.
patent: 5556476 (1996-09-01), Lei et al.
patent: 5639691 (1997-06-01), Klein et al.
patent: 5656123 (1997-08-01), Salimian et al.
patent: 5679625 (1997-10-01), Ito et al.
patent: 5728278 (1998-03-01), Okamura et al.
patent: 5849163 (1998-12-01), Ichikawa et al.
patent: 5933753 (1999-08-01), Simon et al.
patent: 5933973 (1999-08-01), Fenley, Jr.
patent: 5976327 (1999-11-01), Tanaka
patent: 5986762 (1999-11-01), Challener
patent: 6015594 (2000-01-01), Yoshikawa
patent: 6051114 (2000-04-01), Yao et al.
patent: 6077403 (2000-06-01), Kobayashi et al.
patent: 6080285 (2000-06-01), Liu et al.
patent: 6117279 (2000-09-01), Smolanoff et al.
patent: 6139697 (2000-10-01), Chen et al.
patent: 6153068 (2000-11-01), Ohmi et al.
patent: 6168690 (2001-01-01), Jewett et al.
patent: 6197167 (2001-03-01), Tanaka
patent: 6221217 (2001-04-01), Moslehi et al.
patent: 6221221 (2001-04-01), Al-Shaikh et al.
patent: 6228236 (2001-05-01), Rosenstein et al.
patent: 6232236 (2001-05-01), Shan et al.
patent: 6251242 (2001-06-01), Fu et al.
patent: 6274008 (2001-08-01), Gopalraja et al.
patent: 6277249 (2001-08-01), Gopalraja et al.
patent: 6283357 (2001-09-01), Kulkarni et al.
patent: 6287977 (2001-09-01), Hashim et al.
patent: 6309978 (2001-10-01), Donohoe et al.
patent: 6350353 (2002-02-01), Gopalraja et al.
patent: 6352620 (2002-03-01), Yu et al.
patent: 6377060 (2002-04-01), Burkhart et al.
patent: 6436251 (2002-08-01), Gopalraja et al.
patent: 6444104 (2002-09-01), Gopalraja et al.
patent: 6444137 (2002-09-01), Collins et al.
patent: 6451177 (2002-09-01), Gopalraja et al.
patent: 6458252 (2002-10-01), Russell
patent: 6461483 (2002-10-01), Gopalraja et al.
patent: 6462482 (2002-10-01), Wickramanayaka et al.
patent: 6485617 (2002-11-01), Fu et al.
patent: 6485618 (2002-11-01), Gopalraja et al.
patent: 6488807 (2002-12-01), Toshima et al.
patent: 6498091 (2002-12-01), Chen et al.
patent: 6500762 (2002-12-01), Hashim et al.
patent: 6514390 (2003-02-01), Xu et al.
patent: 6518195 (2003-02-01), Collins et al.
patent: 6545420 (2003-04-01), Collins et al.
patent: 6554979 (2003-04-01), Stimson
patent: 6559061 (2003-05-01), Hashim et al.
patent: 6627050 (2003-09-01), Miller et al.
patent: 6652718 (2003-11-01), D'Couto et al.
patent: 6660622 (2003-12-01), Chen et al.
patent: 6696360 (2004-02-01), Ahn et al.
patent: 6709553 (2004-03-01), Wang et al.
patent: 6709987 (2004-03-01), Hashim et al.
patent: 6755945 (2004-06-01), Yasar et al.
patent: 6787006 (2004-09-01), Gopalraja et al.
patent: 6860973 (2005-03-01), Willms et al.
patent: 7037837 (2006-05-01), Grunow et al.
patent: 7214619 (2007-05-01), Brown et al.
patent: 7244344 (2007-07-01), Brown et al.
patent: 2001/0023822 (2001-09-01), Koizumi et al.
patent: 2001/0050220 (2001-12-01), Chiang et al.
patent: 2002/0004309 (2002-01-01), Collins et al.
patent: 2002/0104751 (2002-08-01), Drewery et al.
patent: 2003/0116427 (2003-06-01), Ding et al.
patent: 2003/0124846 (2003-07-01), Chiang et al.
patent: 2003/0159925 (2003-08-01), Sako
patent: 2003/0209422 (2003-11-01), Wang et al.
patent: 2003/0216035 (2003-11-01), Rengarajan et al.
patent: 2004/0025791 (2004-02-01), Chen et al.
patent: 2004/0026235 (2004-02-01), Stowell
patent: 2004/0152301 (2004-08-01), Hashim et al.
patent: 2004/0188239 (2004-09-01), Robison et al.
patent: 2005/0056536 (2005-03-01), Gopalraja et al.
patent: 2005/0074968 (2005-04-01), Chen et al.
patent: 2006/0073283 (2006-04-01), Brown et al.
patent: 2006/0073690 (2006-04-01), Brown et al.
patent: 2006/0169578 (2006-08-01), Brown et al.
patent: 2006/0169582 (2006-08-01), Brown et al.
patent: 2006/0169584 (2006-08-01), Brown et al.
patent: 2006/0172536 (2006-08-01), Brown et al.
patent: 2006/0191876 (2006-08-01), Brown et al.
patent: 2007/0193982 (2007-08-01), Brown et al.
patent: 0782172 (1997-07-01), None
patent: 0799903 (1997-10-01), None
patent: 0807954 (1997-11-01), None
patent: 0878825 (1997-11-01), None
patent: 0841683 (1998-05-01), None
patent: 1094493 (2001-04-01), None
patent: 1128414 (2001-08-01), None
patent: 1146543 (2001-10-01), None
patent: 01309965 (1989-12-01), None
patent: 02182873 (1990-07-01), None
patent: 05148627 (1993-06-01), None
patent: 407074159 (1995-03-01), None
patent: WO 98/48444 (1998-10-01), None
Boyle, P.C., et al., “Independent control of ion current and ion impact energy onto electrodes in dual frequency plasma devices”,Journal of Physics D: Applied Physics, 2004, pp. 697-701, vol. 37, Institute of Physics Publishing, United Kingdom.
Wickramanayaka, Sunil, et al., “Using I-PVD for copper-based interconnects”,Solid State Technology, Oct. 2002, pp. 67-74.
Official Action Dated Aug. 5, 2009 in Co-Pending U.S. Appl. No. 11/222,231.
Official Action Dated Aug. 18, 2009 in Co-Pending U.S. Appl. No. 11/140,513.
Official Action Dated Mar. 19, 2009 in Co-Pending U.S. Appl. No. 11/438,496.
Official Action Dated Oct. 7, 2009 in Co-Pending U.S. Appl. No. 11/438,496.
Official Action Dated Oct. 6, 2009 in Co-Pending U.S. Appl. No. 11/140,513.
Official Action Dated Oct. 19, 2009 in Co-Pending U.S. Appl. No. 11/222,231.
Official Action Dated Nov. 23, 2009 in Co-Pending U.S. Appl. No. 11/222,248.
Official Action Dated Jan. 26, 2010 in Co-Pending U.S. Appl. No. 11/222,231.
Official Action Dated Jan. 29, 2010 in Co-Pending U.S. Appl. No. 11/222,248.
Brown Karl M.
Mehta Vineet
Pipitone John
Applied Materials Inc.
Brayton John
Hendricks Keith
Wallace Robert M.
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