Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-10-25
2005-10-25
Schillinger, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S636000, C438S637000
Reexamination Certificate
active
06958294
ABSTRACT:
An embodiment of the instant invention is a method of fabricating an electronic device formed on a semiconductor wafer, the method comprising the steps of: forming a layer of a first material (layer622of FIG.6a) over the substrate; forming a photoresist layer (layer626of FIG.6b) over the layer of the first material; patterning the layer of the first material; removing the photoresist layer after patterning the layer of the first material; and subjecting the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen or deuterium so as to remove residue from the first material. Preferably, the step of removing the photoresist layer is performed by subjecting the semiconductor wafer to the plasma which incorporates a gas which substantially includes hydrogen or deuterium. The gas which includes hydrogen or deuterium is, preferably, comprised of a gas selected from the group consisting of: NH3, N2H2, H2S, CH4, and deuterated forms of these gases, and may, additionally, include a forming gas. The forming gas is, preferably, comprised of a gas consisting of: argon, nitrogen, and any other inert gas.
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Aldrich David B.
Smith Patricia B.
Xing Guoqiang
Brady III W. James
McLarty Peter K.
Schillinger Laura M
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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