Method for patterning a photoresist material wherein an anti-ref

Details Method for patterning a photoresist material wherein an anti-ref Method for patterning a photoresist material wherein an anti-ref

1996-10-01

1998-04-07

Chu, John S.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

4302711, 430326, 430510, 430512, G03F 730, G03C 1825

Patent

active

057363013

ABSTRACT:
A co-polymer of benzophenone and bisphenol A has been shown to have DUV absorption properties. Therefore, the co-polymer has particular utility as an antireflective coating in microlithography applications. Incorporating anthracene into the co-polymer backbone enhances absorption at 248 nm. The endcapper used for the co-polymer can vary widely depending on the needs of the user and can be selected to promote adhesion, stability, and absorption of different wavelengths.

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