Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-12
2006-09-12
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S265000, C438S287000
Reexamination Certificate
active
07105398
ABSTRACT:
A process implementing steps for determining encroachment of a spacer structure in a semiconductor device having thick and thin spacer regions, including a transition region formed therebetween. The method steps comprise: obtaining a line width roughness (LWR) measurement at at least one location along each thick, thin and transition spacer regions; determining a threshold LWR measurement value based on the LWR measurements; defining a region of interest (ROI) and obtaining a further LWR measurement in the ROI; comparing the LWR measurement in the ROI against the threshold LWR measurement value; and, notifying a user that either encroachment of the spacer structure is present when the LWR measurement in the ROI is below the threshold LWR measurement value, or that no encroachment of the spacer structure is present when the LWR measurement in the ROI is above the threshold LWR measurement value.
REFERENCES:
patent: 5851864 (1998-12-01), Ito et al.
patent: 2004/0075151 (2004-04-01), Fung et al.
Dirahoui Bachir
Mo Renee T.
Ramachandran Ravikumar
Solecky Eric P.
Dang Phuc T.
Li, Esq. Todd M. C.
LandOfFree
Method for monitoring lateral encroachment of spacer process... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for monitoring lateral encroachment of spacer process..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for monitoring lateral encroachment of spacer process... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3617573