Method for monitoring a density profile of impurities

Details Method for monitoring a density profile of impurities Method for monitoring a density profile of impurities

2007-03-06

2007-03-06

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

C438S748000, C438S514000, C257SE21530

Reexamination Certificate

active

10787772

ABSTRACT:
A method of monitoring a density profile of impurities, the method including presetting a monitoring position of a thin layer coated on a substrate, the density profile of impurities being monitored from the monitoring position in a direction of thickness of the thin layer, moving an exposer for exposing a local area of the thin layer to the monitoring position, exposing the local area of the thin layer along the direction of thickness of the thin layer, forming a shape profile of the exposed local area of the thin layer, and monitoring the density profile of impurities by determining a density of impurities in accordance with the shape profile, and an apparatus therefor. The impurity density profile may be monitored without destroying a substrate on which a thin layer is coated, and an amount of impurities used for forming the thin layer may be monitored and controlled in real-time.

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