Method for minimizing the vapor deposition of tungsten oxide...

Details Method for minimizing the vapor deposition of tungsten oxide... Method for minimizing the vapor deposition of tungsten oxide...

2006-08-22

2006-08-22

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

C438S592000, C438S773000, C257SE23145

Reexamination Certificate

active

07094637

ABSTRACT:
During a selective oxidation of gate structures that includes a polycrystalline silicon layer and a tungsten layer, which is known per se, a vapor deposition of tungsten oxide is prevented or at least greatly reduced by a special process. The gate structure is acted on by a hydrogen-containing, nonaqueous inert gas before and, if appropriate, after a treatment step with a hydrogen/water mixture.

REFERENCES:
patent: 6162741 (2000-12-01), Akasaka et al.
patent: 6165883 (2000-12-01), Hiura
patent: 6228752 (2001-05-01), Miyano
patent: 0 116 317 (1984-08-01), None
patent: 0 849 777 (1998-06-01), None
patent: 11031666 (1999-02-01), None
patent: 01/17021 (2001-03-01), None
Wolf and Tauber; Silicon Processing for the VLSI Era vol. 1: Process Technology; pp. 57, 208 and 209; 1986, Lattice Press; Sunset Beach, CA.

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