Method for manufacturing strained silicon...

Details Method for manufacturing strained silicon... Method for manufacturing strained silicon...

2007-09-18

2007-09-18

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S198000, C257SE21122, C257S371000, C257S627000

Reexamination Certificate

active

11037622

ABSTRACT:
The present invention provides a strained Si directly on insulator (SSDOI) substrate having multiple crystallographic orientations and a method of forming thereof. Broadly, but in specific terms, the inventive SSDOI substrate includes a substrate; an insulating layer atop the substrate; and a semiconducting layer positioned atop and in direct contact with the insulating layer, the semiconducting layer comprising a first strained Si region and a second strained Si region; wherein the first strained Si region has a crystallographic orientation different from the second strained Si region and the first strained Si region has a crystallographic orientation the same or different from the second strained Si region. The strained level of the first strained Si region is different from that of the second strained Si region.

REFERENCES:
patent: 7094634 (2006-08-01), Zhu et al.
patent: 2006/0003554 (2006-01-01), Zhu et al.
patent: 2006/0060925 (2006-03-01), Doris et al.
patent: 2006/0172495 (2006-08-01), Zhu et al.
patent: 2006/0237790 (2006-10-01), Zhu et al.

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