Method for manufacturing silicon wafer

Details Method for manufacturing silicon wafer Method for manufacturing silicon wafer

2005-04-12

2005-04-12

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

By differential heating

C438S502000, C438S522000

Reexamination Certificate

active

06878645

ABSTRACT:
Provided is a process for manufacturing a silicon wafer employing heat treatment which is applied on the silicon wafer in inert gas atmosphere represented by Ar annealing to annihilate Grown-in defects in a surface layer region of the silicon wafer as well as to cause no degradation of haze and micro-roughness on a surface thereof. In a process for manufacturing a silicon wafer having a step of heat treating the silicon wafer in inert gas atmosphere, using a purge box with which the silicon wafer heat treated in the inert gas atmosphere can be unloaded to outside a reaction tube of a heat treatment furnace without being put into contact with the open air, the purge box is filled with mixed gas of nitrogen and oxygen or 100% oxygen gas, and the heat treated silicon wafer is unloaded into the purge box.

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A copy of International Search Report for PCT/JP01/05887 mailed on Sep. 25, 2001.
International Preliminary Examination Report for PCT/JP01/05887 mailed on Jul. 10, 2003.

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