Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2009-02-03
2010-12-21
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S762000, C438S777000, C438S786000, C257SE21267
Reexamination Certificate
active
07855153
ABSTRACT:
A method for manufacturing an insulating film, which is used as an insulating film used for a semiconductor integrated circuit, whose reliability can be ensured even though it has small thickness, is provided. In particular, a method for manufacturing a high-quality insulating film over a substrate having an insulating surface, which can be enlarged, at low substrate temperature, is provided. A monosilane gas (SiH4), nitrous oxide (N2O), and a rare gas are introduced into a chamber to generate high-density plasma at a pressure higher than or equal to 10 Pa and lower than or equal to 30 Pa so that an insulating film is formed over a substrate having an insulating surface. After that, the supply of a monosilane gas is stopped, and nitrous oxide (N2O) and a rare gas are introduced without exposure to the air to perform plasma treatment on a surface of the insulating film.
REFERENCES:
patent: 5729308 (1998-03-01), Yamazaki et al.
patent: 5763899 (1998-06-01), Yamazaki et al.
patent: 6278131 (2001-08-01), Yamazaki et al.
patent: 6399520 (2002-06-01), Kawakami et al.
patent: 6417896 (2002-07-01), Yamazaki et al.
patent: 6914642 (2005-07-01), Yamazaki et al.
patent: 7465677 (2008-12-01), Isobe et al.
patent: 2006/0238132 (2006-10-01), Kitamura et al.
patent: 2006/0275710 (2006-12-01), Yamazaki et al.
patent: 2008/0299689 (2008-12-01), Yamazaki
patent: 2009/0011611 (2009-01-01), Ichijo et al.
patent: 1 811 562 (2007-07-01), None
patent: 11-121763 (1999-04-01), None
patent: 2001-291872 (2001-10-01), None
patent: 2006-332634 (2006-12-01), None
patent: 2007-005705 (2007-01-01), None
patent: 2007-048982 (2007-02-01), None
patent: WO 2004/017396 (2004-02-01), None
Ichijo Mitsuhiro
Ohtsuki Takashi
Okazaki Kenichi
Tanaka Tetsuhiro
Yamazaki Shunpei
Estrada Michelle
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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