Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2007-04-03

2007-04-03

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C438S283000

Reexamination Certificate

active

10875683

ABSTRACT:
Several a transistor, which are inhibited short channel effect moderately according to each transistor's channel length, are formed on a same SOI substrate.In the present invention, forming a first transistor on SOI substrate, and forming a second transistor which has a gate electrode whose length is longer than a gate length of the first transistor in a channel directionThe impurities are doped from above a surface of the SOI substrate in an oblique direction against the surface, and from source side and drain side of the first transistor and the second transistor.By this means, a pocket layer is formed under an insulator layer of a SOI substrate.

REFERENCES:
patent: 5675172 (1997-10-01), Miyamoto et al.
patent: 6489207 (2002-12-01), Furukawa et al.
patent: 6512258 (2003-01-01), Maeda
patent: 6828634 (2004-12-01), Oshima
patent: 08-153880 (1996-06-01), None

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