Method for manufacturing self-aligned BiCMOS

Details Method for manufacturing self-aligned BiCMOS Method for manufacturing self-aligned BiCMOS

2005-01-25

2005-01-25

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S312000, C438S361000

Reexamination Certificate

active

06846710

ABSTRACT:
Provided is a method for manufacturing a self-aligned BiCMOS including a SiGe heterojunction bipolar transistor (HBT) for performing high-frequency operations. In this method, an extrinsic base and a selective ion-implanted collector (SIC) are formed by a self-alignment process.

REFERENCES:
patent: 6265275 (2001-07-01), Marty et al.
patent: 6344384 (2002-02-01), Arai et al.
patent: 20030132453 (2003-07-01), Greenberg et al.
patent: 2002-16158 (2002-01-01), None
patent: 01-51482 (2001-06-01), None

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