Method for manufacturing NAND type mask-ROM having improved cell

Details Method for manufacturing NAND type mask-ROM having improved cell Method for manufacturing NAND type mask-ROM having improved cell

1995-06-26

1998-02-10

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438278, 438289, H01L 218246

Patent

active

057168857

ABSTRACT:
A method for manufacturing a mask-ROM comprises a first process of forming a spacer on a side wall of a gate electrode; a second process of eliminating the spacer disposed on the side wall of the gate electrode of an on-cell; and a third process of doping impurity on the entire surface of a semiconductor substrate formed in the preceding process.

REFERENCES:
patent: 4639892 (1987-01-01), Mizugaki et al.
patent: 4837181 (1989-06-01), Galbiati et al.
patent: 5200355 (1993-04-01), Choi et al.
patent: 5342798 (1994-08-01), Huang
patent: 5547888 (1996-08-01), Yamazaki

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