Method for manufacturing NAND flash device

Details Method for manufacturing NAND flash device Method for manufacturing NAND flash device

2005-08-16

2005-08-16

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S624000, C438S634000, C438S638000, C438S261000

Reexamination Certificate

active

06930001

ABSTRACT:
Disclosed is a method for manufacturing a NAND flash device. After a source line plug hole is formed, a drain contact plug hole is formed. The holes are filled with a conductive material film and are then polished. It is therefore possible to simplify the process since a blanket etch process step is omitted. Moreover, loss of a drain contact plug by the blanket etch process is prevented. It is therefore possible to improve the electrical properties of a device and reduce the manufacturing cost price.

REFERENCES:
patent: 6489201 (2002-12-01), Yoon
patent: 6593190 (2003-07-01), Lee et al.

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