Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-03-13
1999-12-21
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438305, H01L 21336
Patent
active
060048514
ABSTRACT:
A method for manufacturing a metal-oxide-semico nductor field effect transistor (MOSFET) having a drain and a source each of which has a lightly doped area, an enhanced lightly doped area and a heavily doped area is disclosed. The method includes steps of lightly doping the silicon substrate having a gate structure to form the lightly doped areas of the source and the drain; forming a first non-conductive layer covering the silicon substrate and the gate, forming a second non-conductive layer covering the first non-conductive layer, forming a duple-sidewall including a side-wall-spacer of the first non-conductive layer and an inner spacer, heavily doping the silicon substrate to form the heavily doped areas of the source and the drain respectively, removing the side-wall-spacer of the first non-conductive layer, executing an anisotropic etching on the inner spacer to form a cascade-shaped spacer of the gate, and doping the silicon substrate to form the enhanced lightly doped area and thus forming the extension area of the heavily doped area.
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Holtek Microelectronics Inc.
Lebentritt Michael S.
Niebling John F.
O'Connor Christensen
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