Method for manufacturing gate dielectric layer

Details Method for manufacturing gate dielectric layer Method for manufacturing gate dielectric layer

2007-09-25

2007-09-25

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S981000, C257SE27064

Reexamination Certificate

active

11164332

ABSTRACT:
A method for manufacturing a gate dielectric layer is provided. A substrate divided into at least a high voltage circuit region and a low voltage circuit region is provided. A first dielectric layer serving as gate dielectric layer in the high voltage circuit region is formed on the substrate. A mask layer is formed over the first dielectric layer. The mask layer, the first dielectric layer and the substrate are patterned to form trenches in the substrate. An isolation layer is formed to fill the trenches. The mask layer and part of the isolation layer are removed to expose the surface of the first dielectric layer. The first dielectric layer of the low voltage circuit region is removed to expose the surface of the substrate. A second dielectric layer having a thickness smaller than the first dielectric layer is formed on the substrate in the low voltage circuit region.

REFERENCES:
patent: 6417037 (2002-07-01), Feng

Affiliated with

Also associated with

Rating

Method for manufacturing gate dielectric layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing gate dielectric layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing gate dielectric layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3793239