Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-03-19
1999-06-15
Brown, Peter Toby
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438 3, 438396, H01L 218242
Patent
active
059131179
ABSTRACT:
This invention is related to the manufacturing method of ferroelectric capacitor, which can be applied to the memory cell of FRAM (Ferroelectric Random Access Memory). Fabrication of ferroelectric capacitor comprising the steps of: coating a first PZT sol-gel solution on a RuO.sub.X electrode to form a first PZT layer; baking the first PZT layer; annealing the first PZT layer to produce a seed layer with a perovskite structure; coating a second PZT sol-gel solution on the seed layer to form a second PZT layer; baking the second PZT layer; and annealing the second PZT layer to form a PZT film with a perovskite structure. The ferroelectric capacitor not only has a lower leakage current level and a higher degree of remanent polarization than the conventional capacitor, but also has almost the same leakage current level as an existing Pt/PZT/Pt capacitor.
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H.N. Al-Shareef et al. "Characterization of Sol-Gel Pb(Zr.sub.x Ti.sub.1-x)O.sub.3 Thin Film Capacitors with Hybrid (Pt,RuO.sub.2) Electrodes" Proceedings of the NATO Advanced Research Workshop Science and Technology of Electroceramic Thin Films, Villa del Mare, Italy, Jun. 20-24, 1994, pp. 133-146.
W. Lee, et al., "Preparation and electrical properties of high quality PZT thin films on RuO.sub.x electrode" Integrated Ferroelectrics, vol. 10, pp. 145-154, 1995.
Brown Peter Toby
Samsung Electronics Co,. Ltd.
Thomas Toniae M.
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